National Science Foundation
SBIR Phase II: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

National Science Foundation
SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Department of Energy
Fairfield Crystal Technology is awarded a
DOE Phase II SBIR Award