AWARDS


September 2010
Fairfield Crystal wins another Phase II SBIR Award -
SBIR Phase II: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

July 2009
The latest NSF grant awarded to Fairfield Crystal Technology is the SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors


January 2009
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant



September 2008
Fairfield Crystal is selected as the Shipman & Goodwin Most Promising Emerging Technology Company of the Year at the second annual Innovation Pipeline Awards and Technology Showcase.


April 2008
Fairfield Crystal Technology is awarded a grant from CCAT SBIR Office.


October 2007
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant



April 2006
Fairfield Crystal Technology is awarded a Department of Energy Phase II SBIR grant



April 2006
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant



April 2005
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant